PNP Bipolar Junction Power Transistor, DPAK package, rated for 6A continuous collector current and 100V collector-emitter breakdown voltage. Features a maximum collector-emitter saturation voltage of 1.5V and a minimum DC current gain (hFE) of 30. Operates across a wide temperature range from -65°C to 150°C, with a maximum power dissipation of 1.75W. This RoHS compliant component is supplied on a 2500-piece tape and reel, suitable for automotive applications.
Frequency1MHz
PackageDPAK
PolarityPNP
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Technical Specifications
Onsemi NJVMJD42CT4G technical specifications.
General
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector-emitter Voltage-Max | 1.5V |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 3MHz |
| Height | 2.38mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 6A |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.75W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101 |
| Transition Frequency | 3MHz |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NJVMJD42CT4G Datasheet
Download the complete datasheet for Onsemi NJVMJD42CT4G to view detailed technical specifications.
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