NPN Bipolar Junction Transistor (BJT) designed for power applications. Features a 250V Collector-Emitter Voltage (VCEO) and a maximum collector current of 15A. Offers a power dissipation of 200W and a transition frequency of 30MHz. Packaged in a TO-218-3 with a minimum hFE of 75. RoHS compliant and lead-free.
Frequency30MHz
PackageTO-218-3
PolarityNPN
Power200W
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Technical Specifications
Onsemi NJW3281G technical specifications.
General
| Package/Case | TO-218-3 |
| Collector Base Voltage (VCBO) | 250V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 250V |
| Collector-emitter Voltage-Max | 600mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 30MHz |
| Gain Bandwidth Product | 30MHz |
| Height | 20.1mm |
| hFE Min | 75 |
| Lead Free | Lead Free |
| Length | 15.8mm |
| Max Breakdown Voltage | 250V |
| Max Collector Current | 15A |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200W |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 30MHz |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NJW3281G Datasheet
Download the complete datasheet for Onsemi NJW3281G to view detailed technical specifications.
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