The NSB1011XV6T5 is a lead-free, NPN bipolar junction transistor with a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. It has a minimum current gain of 35 and a maximum power dissipation of 357mW. The transistor is packaged in a 6-pin SOT-563-6 case and is available on tape and reel. It operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations.
PackageSOT-563-6
PolarityNPN
Power357mW
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Technical Specifications
Onsemi NSB1011XV6T5 technical specifications.
General
| Package/Case | SOT-563-6 |
| Collector-emitter Voltage-Max | 50V |
| Continuous Collector Current | 100mA |
| hFE Min | 35 |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 357mW |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSB1011XV6T5 Datasheet
Download the complete datasheet for Onsemi NSB1011XV6T5 to view detailed technical specifications.
No datasheet is available for this part.