The NSBC114EPDXV6T5G is a PNP/NPN bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It has a maximum power dissipation of 500mW and is packaged in a SOT-563-6 small outline package. The transistor is lead-free and RoHS compliant, with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C.
PackageSOT-563-6
Current Rating100mA
PolarityPNP, NPN
Power357mW
Quick Jump:
Technical Specifications
Onsemi NSBC114EPDXV6T5G technical specifications.
General
| Package/Case | SOT-563-6 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| hFE Min | 35 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Package Quantity | 8000 |
| Packaging | Tape and Reel |
| Polarity | PNP, NPN |
| Power Dissipation | 357mW |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSBC114EPDXV6T5G Datasheet
Download the complete datasheet for Onsemi NSBC114EPDXV6T5G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
