The NSBC144EDXV6T1G is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It can handle a maximum power dissipation of 500mW and operates within a temperature range of -55°C to 150°C. The device is packaged in a SOT-563-6 package and is lead-free and RoHS compliant.
PackageSOT-563-6
Current Rating100mA
PolarityNPN
Power357mW
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Technical Specifications
Onsemi NSBC144EDXV6T1G technical specifications.
General
| Package/Case | SOT-563-6 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 100mA |
| Max Power Dissipation | 500mW |
| Operating Supply Voltage | 50V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 357mW |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSBC144EDXV6T1G Datasheet
Download the complete datasheet for Onsemi NSBC144EDXV6T1G to view detailed technical specifications.
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