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Technical Specifications
Onsemi NSL12AWT1 technical specifications.
General
| Collector Base Voltage (VCBO) | -12V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | -170mV |
| Collector-emitter Voltage-Max | 290mV |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 100 |
| Lead Free | Contains Lead |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 450mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -12V |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Onsemi NSL12AWT1 Datasheet
Download the complete datasheet for Onsemi NSL12AWT1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.