
PNP Bipolar Junction Transistor (BJT) in a 6-lead SC-88/SC70-6/SOT-363 package. Features a maximum collector current of 2A and a collector-emitter saturation voltage of -170mV. Operates with a collector-emitter voltage (VCEO) of 12V and a current rating of -3A. Offers a transition frequency of 100MHz and a minimum DC current gain (hFE) of 100. This component is RoHS compliant and operates within a temperature range of -55°C to 150°C.
Onsemi NSL12AWT1G technical specifications.
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 12V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | -170mV |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector-emitter Voltage-Max | 290mV |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Halogen Free | Halogen Free |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 2A |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 450mW |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 650mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -12V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NSL12AWT1G to view detailed technical specifications.
No datasheet is available for this part.
