
Dual NPN Bipolar Junction Transistor (BJT) for LED driving, featuring a 45V Collector-Emitter Voltage (VCEO) and 500mA Continuous Collector Current. This surface mount transistor operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 500mW. It boasts a 100MHz transition frequency and a low Collector-Emitter Saturation Voltage of 700mV. Packaged in a compact SC case, this RoHS compliant component is supplied on a 3000-piece tape and reel.
Onsemi NSM4002MR6T1G technical specifications.
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 700mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Width | 1.7mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NSM4002MR6T1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
