NPN bipolar junction transistor (BJT) in a SOT-23-3 package, designed for low VCE(sat) applications. Features a maximum collector current of 2A and a collector-emitter voltage of 12V. Offers a minimum DC current gain (hFE) of 200 and a transition frequency of 150MHz. Operates across a temperature range of -55°C to 150°C with a power dissipation of 540mW. Packaged in a 3000-piece tape and reel, this component is RoHS compliant.
Frequency150MHz
PackageSOT-23-3
PolarityNPN
Power540mW
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Technical Specifications
Onsemi NSS12201LT1G technical specifications.
General
Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
12V
Collector Emitter Breakdown Voltage
12V
Collector Emitter Voltage (VCEO)
12V
Collector-emitter Voltage-Max
90mV
Emitter Base Voltage (VEBO)
6V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Halogen Free
Halogen Free
hFE Min
200
Lead Free
Lead Free
Max Breakdown Voltage
12V
Max Collector Current
2A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
540mW
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
540mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
150MHz
Compliance
RoHS
Compliant
Datasheet
Onsemi NSS12201LT1G Datasheet
Download the complete datasheet for Onsemi NSS12201LT1G to view detailed technical specifications.
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