NPN Bipolar Junction Transistor (BJT) with a maximum collector current of 6A and a collector-emitter voltage (VCEO) of 12V. Features low VCE(sat) of 120mV and a transition frequency of 140MHz. This device operates within a temperature range of -55°C to 150°C and has a power dissipation of 1.4W. Packaged in a ChipFET SMD/SMT format on a 3000-reel tape and reel, it is RoHS and Halogen Free compliant.
Frequency140MHz
PackageSMD/SMT
PolarityNPN
Power1.4W
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Technical Specifications
Onsemi NSS12601CF8T1G technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 12V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector-emitter Voltage-Max | 120mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 140MHz |
| Gain Bandwidth Product | 140MHz |
| Halogen Free | Halogen Free |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 6A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.4W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 140MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSS12601CF8T1G Datasheet
Download the complete datasheet for Onsemi NSS12601CF8T1G to view detailed technical specifications.
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