PNP Bipolar Junction Transistor (BJT) featuring a low VCE(sat) of -40mV. This discrete semiconductor offers a 100V Collector Emitter Breakdown Voltage and a 100V Collector Emitter Voltage (VCEO). With a maximum collector current of 2A and a transition frequency of 120MHz, it is housed in a compact SOT-23-3 package. The component operates within a temperature range of -55°C to 150°C and is supplied on a 3000-piece tape and reel.
Frequency120MHz
PackageSOT-23-3
PolarityPNP
Power710mW
Quick Jump:
Technical Specifications
Onsemi NSS1C200LT1G technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 140V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | -40mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 250mV |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 120MHz |
| Gain Bandwidth Product | 120MHz |
| Halogen Free | Halogen Free |
| Height | 1.01mm |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 2A |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 710mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 710mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 120MHz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSS1C200LT1G Datasheet
Download the complete datasheet for Onsemi NSS1C200LT1G to view detailed technical specifications.
No datasheet is available for this part.