NPN Bipolar Junction Transistor (BJT) with a 2A maximum collector current and 100V collector-emitter breakdown voltage. Features low 180mV collector-emitter saturation voltage and a 100MHz transition frequency. Packaged in a SOT-223-4 (TO-261) surface-mount case, this component operates from -55°C to 150°C and is supplied on a 1000-piece tape and reel. It is RoHS compliant and halogen-free.
Frequency1MHz
PackageSOT-223-4
PolarityNPN
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Technical Specifications
Onsemi NSS1C201MZ4T1G technical specifications.
General
| Package/Case | SOT-223-4 |
| Collector Base Voltage (VCBO) | 140V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 180mV |
| Collector-emitter Voltage-Max | 180mV |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 100MHz |
| Halogen Free | Halogen Free |
| Height | 1.65mm |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 2A |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSS1C201MZ4T1G Datasheet
Download the complete datasheet for Onsemi NSS1C201MZ4T1G to view detailed technical specifications.
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