The NSS1C201MZ4T3G is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 100V and a maximum collector current of 2A. It features a gain bandwidth product of 100MHz and a maximum power dissipation of 2W. The device is packaged in a SOT-223-4 package and is suitable for operation over a temperature range of -55°C to 150°C. The NSS1C201MZ4T3G is compliant with RoHS regulations and is halogen-free.
PackageSOT-223-4
PolarityNPN
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Technical Specifications
Onsemi NSS1C201MZ4T3G technical specifications.
General
| Package/Case | SOT-223-4 |
| Collector Base Voltage (VCBO) | 140V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector-emitter Voltage-Max | 180mV |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 100MHz |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSS1C201MZ4T3G Datasheet
Download the complete datasheet for Onsemi NSS1C201MZ4T3G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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