NPN bipolar junction transistor (BJT) with a 20V collector-emitter breakdown voltage and 2A maximum collector current. Features a low 220mV collector-emitter saturation voltage and a 350MHz transition frequency. Housed in an SC package, this component operates within a temperature range of -55°C to 150°C and offers 300mW power dissipation. It is RoHS and Halogen Free compliant, supplied in a 3000-piece tape and reel.
Frequency350MHz
PackageSC
PolarityNPN
Power300mW
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Technical Specifications
Onsemi NSS20101JT1G technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 220mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 220mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 350MHz |
| Gain Bandwidth Product | 350MHz |
| Halogen Free | Halogen Free |
| Input Capacitance | 40pF |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 350MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSS20101JT1G Datasheet
Download the complete datasheet for Onsemi NSS20101JT1G to view detailed technical specifications.
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