NPN bipolar junction transistor featuring a low VCE(sat) of 4mV. This device offers a collector-emitter breakdown voltage of 20V and a maximum collector current of 2A. With a transition frequency of 150MHz, it is housed in a compact SOT-23-3 package and supplied on a 3000-piece tape and reel. The transistor operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
Frequency150MHz
PackageSOT-23-3
PolarityNPN
Power540mW
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Technical Specifications
Onsemi NSS20201LT1G technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 4mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 100mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| Halogen Free | Halogen Free |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 2A |
| Max Frequency | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 540mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 540mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSS20201LT1G Datasheet
Download the complete datasheet for Onsemi NSS20201LT1G to view detailed technical specifications.
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