
PNP Bipolar Junction Transistor (BJT) in TSOP package, featuring a low VCE(sat) of -250mV. This component offers a maximum collector current of 3A and a collector-emitter breakdown voltage of 20V. With a transition frequency of 100MHz and a minimum hFE of 100, it operates across a temperature range of -55°C to 150°C. The device is RoHS compliant and halogen-free.
Onsemi NSS20300MR6T1G technical specifications.
| Package/Case | TSOP |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 320mV |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | -6V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Halogen Free | Halogen Free |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 545mW |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 106W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | NSS20300MR6 |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -20V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NSS20300MR6T1G to view detailed technical specifications.
No datasheet is available for this part.
