The NSS20600CF8T1G is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 20V and a maximum collector current of 6A. It has a gain bandwidth product of 100MHz and a minimum current gain of 250. The transistor is packaged in a lead-free 8-pin SMD package and is RoHS compliant. It operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 830mW.
PackageSMD/SMT
MountingSurface Mount
PolarityPNP
Power830mW
Quick Jump:
Technical Specifications
Onsemi NSS20600CF8T1G technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | -20V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | -160mV |
| Collector-emitter Voltage-Max | 200mV |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 250 |
| Lead Free | Lead Free |
| Max Collector Current | 6A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 830mW |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSS20600CF8T1G Datasheet
Download the complete datasheet for Onsemi NSS20600CF8T1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.