NPN bipolar junction transistor (BJT) in a ChipFET SMD/SMT package, featuring a low VCE(sat) of 130mV. This device offers a collector-emitter breakdown voltage of 20V and a maximum collector current of 6A. With a transition frequency of 140MHz and a minimum hFE of 200, it is suitable for high-frequency applications. Operating across a temperature range of -55°C to 150°C, this RoHS and Halogen Free compliant transistor is supplied on a 3000-piece tape and reel.
Frequency140MHz
PackageSMD/SMT
PolarityNPN
Power1.4W
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Technical Specifications
Onsemi NSS20601CF8T1G technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 130mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 140MHz |
| Gain Bandwidth Product | 140MHz |
| Halogen Free | Halogen Free |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 6A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.4W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 140MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSS20601CF8T1G Datasheet
Download the complete datasheet for Onsemi NSS20601CF8T1G to view detailed technical specifications.
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