The NSS30100LT1G is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 1A. It features a gain bandwidth product of 100MHz and a maximum power dissipation of 310mW. The device is packaged in a SOT-23-3 case and is suitable for operating temperatures between -55°C and 150°C. The NSS30100LT1G is lead-free and RoHS compliant.
PackageSOT-23-3
Current Rating-1A
PolarityPNP
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Technical Specifications
Onsemi NSS30100LT1G technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -650mV |
| Collector-emitter Voltage-Max | 650mV |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| Halogen Free | Halogen Free |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 310mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -30V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSS30100LT1G Datasheet
Download the complete datasheet for Onsemi NSS30100LT1G to view detailed technical specifications.
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