NPN Bipolar Junction Transistor (BJT) with a 30V Collector-Emitter Breakdown Voltage and a 2A Max Collector Current. Features low VCE(sat) of 60mV, a 300MHz Gain Bandwidth Product, and a 300MHz Transition Frequency. Packaged in a compact TSOP with dimensions of 3.1mm (L) x 1.7mm (W) x 1mm (H). Operates across a temperature range of -55°C to 150°C and offers 535mW Max Power Dissipation. This component is RoHS Compliant and Halogen Free, supplied on a 3000-piece tape and reel.
Frequency300MHz
PackageTSOP
Current Rating2A
PolarityNPN
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Technical Specifications
Onsemi NSS30201MR6T1G technical specifications.
General
| Package/Case | TSOP |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 60mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 75mV |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| Halogen Free | Halogen Free |
| Height | 1mm |
| hFE Min | 300 |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 2A |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 535mW |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.18W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | NSS30201MR6T1G |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 30V |
| Width | 1.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSS30201MR6T1G Datasheet
Download the complete datasheet for Onsemi NSS30201MR6T1G to view detailed technical specifications.
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