PNP Bipolar Junction Transistor (BJT) with a 35V Collector-Emitter Voltage (VCEO) and a maximum collector current of 2A. Features low VCE(sat) of -300mV and a transition frequency of 100MHz. Packaged in a ChipFET SMD/SMT format, this device offers a maximum power dissipation of 635mW and operates within a temperature range of -55°C to 150°C. It is RoHS compliant and Halogen Free.
Frequency100MHz
PackageSMD/SMT
Current Rating-2A
PolarityPNP
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Technical Specifications
Onsemi NSS35200CF8T1G technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 55V |
| Collector Emitter Breakdown Voltage | 35V |
| Collector Emitter Saturation Voltage | -300mV |
| Collector Emitter Voltage (VCEO) | 35V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | -2A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Halogen Free | Halogen Free |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 35V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 635mW |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 13.5W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | NSS35200CF8T1G |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -35V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSS35200CF8T1G Datasheet
Download the complete datasheet for Onsemi NSS35200CF8T1G to view detailed technical specifications.
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