PNP Bipolar Junction Transistor (BJT) with a 35V Collector-Emitter Voltage (VCEO) and a 2A Max Collector Current. Features a low -260mV Collector-Emitter Saturation Voltage and a 100MHz Transition Frequency. Housed in a TSOP package, this RoHS compliant and Halogen Free component operates from -55°C to 150°C with a 625mW Max Power Dissipation.
Frequency100MHz
PackageTSOP
Current Rating-2A
PolarityPNP
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Technical Specifications
Onsemi NSS35200MR6T1G technical specifications.
General
| Package/Case | TSOP |
| Collector Base Voltage (VCBO) | 55V |
| Collector Emitter Breakdown Voltage | 35V |
| Collector Emitter Saturation Voltage | -260mV |
| Collector Emitter Voltage (VCEO) | 35V |
| Collector-emitter Voltage-Max | 310mV |
| Current Rating | -2A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Halogen Free | Halogen Free |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 35V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -35V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSS35200MR6T1G Datasheet
Download the complete datasheet for Onsemi NSS35200MR6T1G to view detailed technical specifications.
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