PNP Bipolar Junction Transistor (BJT) in SOT-23-3 package. Features a low Collector-Emitter Saturation Voltage of -135mV and a maximum Collector Current of 2A. Offers a Collector-Emitter Breakdown Voltage of 40V and a transition frequency of 100MHz. This RoHS compliant component operates within a temperature range of -55°C to 150°C.
Frequency100MHz
PackageSOT-23-3
PolarityPNP
Power540mW
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Technical Specifications
Onsemi NSS40200LT1G technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -135mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 170mV |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Halogen Free | Halogen Free |
| hFE Min | 250 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 460mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 540mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSS40200LT1G Datasheet
Download the complete datasheet for Onsemi NSS40200LT1G to view detailed technical specifications.
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