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Technical Specifications
Onsemi NSS40300DDR2G technical specifications.
General
| Package/Case | SOIC |
| Collector Base Voltage (VCBO) | -40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 135mV |
| Collector-emitter Voltage-Max | 170mV |
| Emitter Base Voltage (VEBO) | -7V |
| Gain Bandwidth Product | 100MHz |
| Halogen Free | Halogen Free |
| hFE Min | 250 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 783mW |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSS40300DDR2G Datasheet
Download the complete datasheet for Onsemi NSS40300DDR2G to view detailed technical specifications.
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