The NSS40301MDR2G is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 40V and a maximum collector current of 3A. It has a gain bandwidth product of 100MHz and is packaged in a SOIC-8 package. The transistor is RoHS compliant and has a maximum operating temperature of 150°C. It is suitable for use in a variety of applications, including amplifiers and switches.
PackageSOIC
PolarityNPN
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Technical Specifications
Onsemi NSS40301MDR2G technical specifications.
General
| Package/Case | SOIC |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 115mV |
| Collector-emitter Voltage-Max | 115mV |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 100MHz |
| Halogen Free | Halogen Free |
| Height | 1.5mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 783mW |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSS40301MDR2G Datasheet
Download the complete datasheet for Onsemi NSS40301MDR2G to view detailed technical specifications.
No datasheet is available for this part.