Complementary bipolar junction transistor (BJT) in SOIC-8 narrow body package, featuring a low collector-emitter saturation voltage of 115mV. This device offers a maximum collector current of 3A and a collector-emitter breakdown voltage of 40V. With a transition frequency of 100MHz and an operating temperature range of -55°C to 150°C, it is suitable for various applications. The component is RoHS compliant, lead-free, and halogen-free, supplied in a 2500-piece tape and reel.
Frequency100MHz
PackageSOIC
PolarityNPN, PNP
Quick Jump:
Technical Specifications
Onsemi NSS40302PDR2G technical specifications.
General
| Package/Case | SOIC |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 115mV |
| Collector-emitter Voltage-Max | 115mV |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 100MHz |
| Halogen Free | Halogen Free |
| Height | 1.5mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 3A |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 783mW |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSS40302PDR2G Datasheet
Download the complete datasheet for Onsemi NSS40302PDR2G to view detailed technical specifications.
No datasheet is available for this part.
Product Images
