The NSS40600CF8T1G is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 40V and a maximum collector current of 6A. It operates at frequencies up to 100MHz and has a maximum power dissipation of 1.4W. The transistor is packaged in a surface-mount device (SMD/SMT) format and is compliant with RoHS regulations. The operating temperature range is -55°C to 150°C.
Frequency100MHz
PackageSMD/SMT
PolarityPNP
Power1.4W
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Technical Specifications
Onsemi NSS40600CF8T1G technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 220mV |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 100MHz |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Collector Current | 6A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1.4W |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSS40600CF8T1G Datasheet
Download the complete datasheet for Onsemi NSS40600CF8T1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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