
NPN bipolar junction transistor in a SOT-23-3 package, featuring a 60V collector-emitter breakdown voltage and a maximum collector current of 2A. This device offers a low VCE(sat) of 140mV and a minimum hFE of 160, with a transition frequency of 100MHz. Operating temperature range is -55°C to 150°C, with a power dissipation of 540mW. Packaged on a 3000-unit tape and reel, this component is RoHS compliant and halogen-free.
Onsemi NSS60201LT1G technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 140V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 140mV |
| Emitter Base Voltage (VEBO) | 8V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Halogen Free | Halogen Free |
| hFE Min | 160 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 540mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 540mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NSS60201LT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
