NPN Bipolar Junction Transistor (BJT) designed for low VCE(sat) applications. Features a 60V collector-emitter breakdown voltage and a maximum collector current of 6A. Operates with a maximum power dissipation of 2W and a transition frequency of 100MHz. Packaged in a SOT-223-4 (TO-261) surface-mount package, supplied on a 1000-piece tape and reel. RoHS and Halogen Free compliant, with an operating temperature range of -55°C to 150°C.
Frequency100MHz
PackageSOT-223-4
PolarityNPN
Power2W
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Technical Specifications
Onsemi NSS60601MZ4T1G technical specifications.
General
| Package/Case | SOT-223-4 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 300mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Halogen Free | Halogen Free |
| hFE Min | 150 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 6A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSS60601MZ4T1G Datasheet
Download the complete datasheet for Onsemi NSS60601MZ4T1G to view detailed technical specifications.
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