Dual PNP bipolar junction transistor in a SOT-563-6 package, offering a 30V collector-emitter voltage (VCEO) and 30V collector-base voltage (VCBO). Features a maximum collector current of 100mA, a transition frequency of 100MHz, and a low collector-emitter saturation voltage of -600mV. This lead-free, RoHS compliant component operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 661mW. Supplied on a 4000-piece tape and reel.
Frequency100MHz
PackageSOT-563-6
PolarityPNP
Power661mW
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Technical Specifications
Onsemi NST30010MXV6T1G technical specifications.
General
| Package/Case | SOT-563-6 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -600mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 600mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 0.6mm |
| Lead Free | Lead Free |
| Length | 1.7mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 661mW |
| Number of Elements | 2 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 661mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NST30010MXV6T1G Datasheet
Download the complete datasheet for Onsemi NST30010MXV6T1G to view detailed technical specifications.
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