Dual PNP Bipolar Junction Transistor (BJT) in a compact SOT-563-6 package. Features a 40V collector-emitter voltage (VCEO) and a maximum collector current of 200mA. Offers a transition frequency of 250MHz and a minimum DC current gain (hFE) of 60. Operates across a wide temperature range from -55°C to 150°C with a power dissipation of 500mW. This component is lead-free and RoHS compliant, supplied on a 4000-piece tape and reel.
Frequency250MHz
PackageSOT-563-6
Current Rating-200mA
PolarityPNP
Quick Jump:
Technical Specifications
Onsemi NST3906DXV6T1G technical specifications.
General
| Package/Case | SOT-563-6 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -400mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | -200mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 250MHz |
| Height | 0.6mm |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Length | 1.7mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Frequency | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | -40V |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NST3906DXV6T1G Datasheet
Download the complete datasheet for Onsemi NST3906DXV6T1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.