The NST3946DP6T5G is a bipolar junction transistor with a collector-emitter breakdown voltage of 40V and a maximum collector current of 200mA. It has a maximum power dissipation of 420mW and operates within a temperature range of -55°C to 150°C. The transistor is packaged in a SOT-963-6 package and is lead-free. It is RoHS compliant and has a gain bandwidth product of 250MHz.
Frequency200MHz
PackageSOT-963-6
PolarityNPN, PNP
Power420mW
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Technical Specifications
Onsemi NST3946DP6T5G technical specifications.
General
| Package/Case | SOT-963-6 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 300mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 250MHz |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Frequency | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 420mW |
| Number of Elements | 2 |
| Package Quantity | 8000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 420mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NST3946DP6T5G Datasheet
Download the complete datasheet for Onsemi NST3946DP6T5G to view detailed technical specifications.
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