Dual NPN Bipolar Junction Transistor (BJT) in a SOT-363-6 package. Features a collector-emitter voltage (VCEO) of 45V and a maximum collector current of 100mA. Offers a minimum hFE of 150 and a transition frequency of 100MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 380mW. Packaged on a 3000-piece tape and reel, this component is RoHS compliant.
PackageSOT-363-6
PolarityNPN
Quick Jump:
Technical Specifications
Onsemi NST45011MW6T1G technical specifications.
General
| Package/Case | SOT-363-6 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 600mV |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 100MHz |
| Height | 1mm |
| hFE Min | 150 |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 380mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NST45011MW6T1G Datasheet
Download the complete datasheet for Onsemi NST45011MW6T1G to view detailed technical specifications.
No datasheet is available for this part.