The NST856BF3T5G is an 80V 65V PNP bipolar junction transistor with a maximum collector current of 100mA and a maximum power dissipation of 347mW. It is packaged in a SOT-1123 package and has a lead-free finish. The transistor has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It is RoHS compliant and has a gain bandwidth product of 100MHz.
Frequency100MHz
PackageSOT-1123
PolarityPNP
Power347mW
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Technical Specifications
Onsemi NST856BF3T5G technical specifications.
General
| Package/Case | SOT-1123 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector-emitter Voltage-Max | 800mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 347mW |
| Number of Elements | 1 |
| Package Quantity | 8000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 347mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NST856BF3T5G Datasheet
Download the complete datasheet for Onsemi NST856BF3T5G to view detailed technical specifications.
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