NPN bipolar junction transistor featuring a 100V collector-emitter breakdown voltage and a low 180mV collector-emitter saturation voltage. This transistor supports a continuous collector current of 2A and operates with a transition frequency of 100MHz. Packaged in a SOT-223-4 (TO-261) surface-mount case, it offers a maximum power dissipation of 800mW and is supplied on a 1000-piece tape and reel. The component is RoHS compliant and halogen-free, with an operating temperature range from -55°C to 150°C.
Frequency100MHz
PackageSOT-223-4
PolarityNPN
Power2W
Quick Jump:
Technical Specifications
Onsemi NSV1C201MZ4T1G technical specifications.
General
| Package/Case | SOT-223-4 |
| Collector Base Voltage (VCBO) | 140V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 180mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 180mV |
| Continuous Collector Current | 2A |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Weight | 0.008826oz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSV1C201MZ4T1G Datasheet
Download the complete datasheet for Onsemi NSV1C201MZ4T1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
