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Technical Specifications
Onsemi NSV20101JT1G technical specifications.
General
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector-emitter Voltage-Max | 220mV |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 255mW |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 350MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSV20101JT1G Datasheet
Download the complete datasheet for Onsemi NSV20101JT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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