NPN Bipolar Junction Transistor (BJT) in a SOT-223-4 package. Features a 60V Collector-Emitter Breakdown Voltage and a low 85mV Collector-Emitter Saturation Voltage. Offers a maximum collector current of 6A and a transition frequency of 100MHz. Operates within a temperature range of -55°C to 150°C with 2W power dissipation. This component is RoHS compliant and Halogen Free, supplied on a 1000-piece tape and reel.
Frequency100MHz
PackageSOT-223-4
PolarityNPN
Power2W
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Technical Specifications
Onsemi NSV60601MZ4T1G technical specifications.
General
| Package/Case | SOT-223-4 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 85mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 300mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Halogen Free | Halogen Free |
| Height | 1.65mm |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Collector Current | 6A |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSV60601MZ4T1G Datasheet
Download the complete datasheet for Onsemi NSV60601MZ4T1G to view detailed technical specifications.
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