
The NSV60601MZ4T3G is a NPN transistor with a collector base voltage of 100V and a maximum collector current of 6A. It has a maximum power dissipation of 800mW and operates within a temperature range of -55°C to 150°C. The transistor is packaged in a SOT-223-4 case and is lead free and halogen free. It is RoHS compliant and has a transition frequency of 100MHz.
Onsemi NSV60601MZ4T3G technical specifications.
| Package/Case | SOT-223-4 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector-emitter Voltage-Max | 300mV |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Collector Current | 6A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NSV60601MZ4T3G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
