NPN Bipolar Junction Transistor (BJT) in SOT-23-3 surface mount package. Features include a 45V collector-emitter breakdown voltage, 500mA maximum collector current, and 100 minimum hFE. Operates with a 100MHz transition frequency and a maximum power dissipation of 300mW. This lead-free, RoHS compliant component is supplied on a 3000-piece tape and reel.
PackageSOT-23-3
MountingSurface Mount
PolarityNPN
Power225mW
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Technical Specifications
Onsemi NSVBC817-16LT1G technical specifications.
General
Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
700mV
Collector-emitter Voltage-Max
700mV
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
100MHz
Height
1.11mm
hFE Min
100
Lead Free
Lead Free
Max Breakdown Voltage
45V
Max Collector Current
500mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
225mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
100MHz
Weight
0.050717oz
Compliance
RoHS
Compliant
Datasheet
Onsemi NSVBC817-16LT1G Datasheet
Download the complete datasheet for Onsemi NSVBC817-16LT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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