NPN Bipolar Junction Transistor (BJT) in SOT-23-3 surface mount package. Features include a 45V collector-emitter breakdown voltage, 500mA maximum collector current, and 100 minimum hFE. Operates with a 100MHz transition frequency and a maximum power dissipation of 300mW. This lead-free, RoHS compliant component is supplied on a 3000-piece tape and reel.
PackageSOT-23-3
MountingSurface Mount
PolarityNPN
Power225mW
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Technical Specifications
Onsemi NSVBC817-16LT1G technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 700mV |
| Collector-emitter Voltage-Max | 700mV |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| Height | 1.11mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 225mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Weight | 0.050717oz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSVBC817-16LT1G Datasheet
Download the complete datasheet for Onsemi NSVBC817-16LT1G to view detailed technical specifications.
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