The NSVBCP69T1G is a PNP bipolar junction transistor with a collector base voltage of 25V and a maximum collector current of 1A. It is packaged in a SOT-223-4 lead-free package and is suitable for operation over a temperature range of -65°C to 150°C. The transistor has a maximum power dissipation of 1.5W and is compliant with RoHS regulations.
PackageSOT-223-4
PolarityPNP
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Technical Specifications
Onsemi NSVBCP69T1G technical specifications.
General
| Package/Case | SOT-223-4 |
| Collector Base Voltage (VCBO) | 25V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector-emitter Voltage-Max | 500mV |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.5W |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 60MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSVBCP69T1G Datasheet
Download the complete datasheet for Onsemi NSVBCP69T1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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