The NSVMMBT6517LT1G is a surface mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 350V and a maximum collector current of 100mA. It has a maximum power dissipation of 225mW and operates over a temperature range of -55°C to 150°C. This transistor is lead free and RoHS compliant, packaged in a TO-236-3 case and available in tape and reel quantities of 3000.
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| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 350V |
| Collector Emitter Breakdown Voltage | 350V |
| Collector-emitter Voltage-Max | 1V |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| RoHS | Compliant |
These are design resources that include the Onsemi NSVMMBT6517LT1G
ON Semiconductor product discontinuance notice for parts sourced from Panjit Americas. Includes last time buy/ship dates and recommended replacements from Fairchild and NXP.
