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Technical Specifications
Onsemi NSVMUN5132T1G technical specifications.
General
| Package/Case | SC |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector-emitter Voltage-Max | 250mV |
| Halogen Free | Halogen Free |
| Height | 0.9mm |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 202mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSVMUN5132T1G Datasheet
Download the complete datasheet for Onsemi NSVMUN5132T1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.