The NSVT30010MXV6T1G is a PNP transistor from Onsemi with a maximum collector current of 100mA and a maximum power dissipation of 500mW. It has a collector base voltage of 30V and an emitter base voltage of -5V. The transistor is packaged in a SOT-563-6 case and is available in tape and reel packaging. It operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations.
PackageSOT-563-6
PolarityPNP
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Technical Specifications
Onsemi NSVT30010MXV6T1G technical specifications.
General
| Package/Case | SOT-563-6 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector-emitter Voltage-Max | 600mV |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 270 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSVT30010MXV6T1G Datasheet
Download the complete datasheet for Onsemi NSVT30010MXV6T1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.