
Single P-Channel JFET with -20V Drain-Source Breakdown Voltage and -760mA Continuous Drain Current. Features a low Drain-Source On Resistance of 360mΩ (max) and a Threshold Voltage of -450mV. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 301mW. Packaged in a compact SC-75 (SOT-416) 3-lead surface-mount package on a 3000-piece tape and reel. RoHS compliant and lead-free.
Onsemi NTA4151PT1G technical specifications.
| Package/Case | SC |
| Continuous Drain Current (ID) | 760mA |
| Current Rating | -760mA |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 490mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 260mR |
| Element Configuration | Single |
| Fall Time | 8.2ns |
| Gate to Source Voltage (Vgs) | 6V |
| Height | 0.031inch |
| Input Capacitance | 156pF |
| Lead Free | Lead Free |
| Length | 0.064inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 301mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 301mW |
| Radiation Hardening | No |
| Rds On Max | 360mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -450mV |
| Turn-Off Delay Time | 29ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | -20V |
| Width | 0.035inch |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTA4151PT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
