Single P-Channel JFET with -20V Drain-Source Breakdown Voltage and -760mA Continuous Drain Current. Features a low Drain-Source On Resistance of 360mΩ (max) and a Threshold Voltage of -450mV. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 301mW. Packaged in a compact SC-75 (SOT-416) 3-lead surface-mount package on a 3000-piece tape and reel. RoHS compliant and lead-free.
PackageSC
Current Rating-760mA
PolarityP-CHANNEL
Power301mW
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Technical Specifications
Onsemi NTA4151PT1G technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
760mA
Current Rating
-760mA
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
490mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
260mR
Element Configuration
Single
Fall Time
8.2ns
Gate to Source Voltage (Vgs)
6V
Height
0.031inch
Input Capacitance
156pF
Lead Free
Lead Free
Length
0.064inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
301mW
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
301mW
Radiation Hardening
No
Rds On Max
360mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
-450mV
Turn-Off Delay Time
29ns
Turn-On Delay Time
8ns
DC Rated Voltage
-20V
Width
0.035inch
Compliance
RoHS
Compliant
Datasheet
Onsemi NTA4151PT1G Datasheet
Download the complete datasheet for Onsemi NTA4151PT1G to view detailed technical specifications.
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