Single P-channel MOSFET, D2PAK package, featuring a -60V drain-to-source breakdown voltage and a continuous drain current of 27.5A. Offers a low on-resistance of 82mΩ at a 10V gate-source voltage. Designed for high power applications with a maximum power dissipation of 120W and an operating temperature range of -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 14ns and turn-off delay of 43ns. RoHS compliant and lead-free.
PackageD2PAK
Current Rating-25A
PolarityP-CHANNEL
Power120W
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Technical Specifications
Onsemi NTB25P06T4G technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 27.5A |
| Current Rating | -25A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 65mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 190ns |
| Gate to Source Voltage (Vgs) | 15V |
| Height | 4.83mm |
| Input Capacitance | 1.68nF |
| Lead Free | Lead Free |
| Length | 10.29mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 120W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 120W |
| Radiation Hardening | No |
| Rds On Max | 82mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | -60V |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTB25P06T4G Datasheet
Download the complete datasheet for Onsemi NTB25P06T4G to view detailed technical specifications.
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