Single N-Channel Power MOSFET featuring 150V drain-to-source breakdown voltage and 37A continuous drain current. This component offers a low 50mΩ drain-to-source resistance and is housed in a D2PAK package. Key switching characteristics include a 20ns turn-on delay and 120ns fall time. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 178W.
Onsemi NTB35N15T4G technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 37A |
| Current Rating | 37A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 50mR |
| Element Configuration | Single |
| Fall Time | 120ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 3.2nF |
| Lead Free | Lead Free |
| Length | 9.65mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Nominal Vgs | 2.9V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 178W |
| Radiation Hardening | No |
| Rds On Max | 50mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 150V |
| Width | 10.29mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTB35N15T4G to view detailed technical specifications.
No datasheet is available for this part.