N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and 120A continuous drain current. Offers low 6mΩ Rds On resistance and 4.9Ω drain-source resistance. Designed in a D2PAK package with a maximum power dissipation of 215W and an operating temperature range of -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 15ns and fall time of 95ns. Packaged in tape and reel for 800 units.
PackageD2PAK
PolarityN-CHANNEL
Power215W
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Technical Specifications
Onsemi NTB5426NT4G technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 4.9R |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 95ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 5.8nF |
| Lead Free | Lead Free |
| Length | 10.29mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 215W |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 215W |
| Radiation Hardening | No |
| Rds On Max | 6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 3.1V |
| Turn-Off Delay Time | 105ns |
| Turn-On Delay Time | 15ns |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTB5426NT4G Datasheet
Download the complete datasheet for Onsemi NTB5426NT4G to view detailed technical specifications.
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