N-Channel Silicon Carbide MOSFET featuring 1200 V breakdown voltage and 40 mΩ on-resistance. This discrete semiconductor component is housed in a D2PAK-7L package with 7 terminals, designed for single terminal positions. Operating across a wide temperature range from -55°C to 175°C, it offers a robust solution for high-power applications.
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Technical Specifications
Onsemi NTBG040N120SC1 technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 7 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263CB |
| Number of Elements | 1 |
Compliance
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Onsemi NTBG040N120SC1 Datasheet
Download the complete datasheet for Onsemi NTBG040N120SC1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.