The NTD20N03L27-1G is a 20A N-CHANNEL MOSFET with a drain to source breakdown voltage of 30V and a maximum power dissipation of 74W. It features a TO-251-3 package and is designed for through hole mounting. The device operates over a temperature range of -55°C to 150°C and is compliant with lead-free standards. The NTD20N03L27-1G has a nominal Vgs of 1.6V and an input capacitance of 1.26nF.
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| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 20A |
| Current Rating | 20A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 27mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.26nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 74W |
| Mount | Through Hole |
| Nominal Vgs | 1.6V |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 74W |
| Rds On Max | 27mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 38ns |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
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Official notice from ON Semiconductor detailing the discontinuance of various discrete, analog, and power products with final buy dates in late 2006.
