
N-Channel Power MOSFET featuring 25V drain-source breakdown voltage and 23A current rating. Offers low 45mΩ Rds(on) and 32mΩ drain-to-source resistance for efficient power switching. Designed for surface mount applications in a DPAK package, with fast switching speeds including 2ns turn-on delay and 2ns fall time. Maximum power dissipation is 22.3W, operating within a temperature range of -55°C to 150°C. Packaged on a 2500-piece tape and reel, this RoHS compliant component is lead-free.
Onsemi NTD23N03RT4G technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 17.1A |
| Current Rating | 23A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 32mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 225pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 22.3W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 22.3W |
| Radiation Hardening | No |
| Rds On Max | 45mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 9.9ns |
| Turn-On Delay Time | 2ns |
| DC Rated Voltage | 25V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTD23N03RT4G to view detailed technical specifications.
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